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Power module with 1200-V-class GaN transistors (IMAGE) FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS Facebook X LinkedIn WeChat Bluesky Message WhatsApp Email CAPTION Close-up of the power module developed and manufactured at Fraunhofer IAF, featuring 1200-V-class GaN transistors on an insulating substrate for use in bidirectional DC charging systems CREDIT © Fraunhofer IAF USAGE RE