STMicroelectronics’ GaN Semiconductors Improve Energy Efficiency - Ink World magazine -

STMicroelectronics has launched new 700V gallium nitride (GaN) power semiconductor devices aimed at improving energy efficiency and power density in high-demand applications. These devices, part of th... Read original →

STMicroelectronics’ 700V GaN launch accelerates the displacement of silicon MOSFETs in high-efficiency applications. Technically, it forces upstream redesigns in power ICs, thermal solutions, and PCB materials—especially enabling 48V direct-conversion architectures in AI servers. Regulatory tailwinds from the EU Green Deal and U.S. Inflation Reduction Act reward GaN’s lower carbon footprint, yet supply chain exposure to Taiwan, China and Japan raises geopolitical risk. Competitors like Infineon and Navitas will likely fast-track automotive GaN certifications and deploy patent cross-licensing as defensive moats. Within 12–24 months, GaN will command a 'power-density premium' in robotic actuators and edge-AI hardware, pulling mid-power markets past the Si-to-GaN inflection point ahead of schedule.