Next-generation power chips top 3,400 volts in 5x voltage leap for future EVs - Interesting Engineering

Researchers at EPFL have achieved a significant breakthrough in gallium nitride (GaN) power electronics, developing a new type of chip capable of handling over 3,400 volts. This advancement promises t... Read original →

EPFL's breakthrough in gallium nitride power chips reaching over 3,400 volts marks a pivotal shift in high-voltage semiconductor design. By leveraging spontaneous and piezoelectric polarization to balance charge distribution, the innovation overcomes traditional GaN limitations in voltage handling, offering enhanced power management for EVs and AI data centers. This advancement will reshape the upstream material and process landscape, while driving downstream applications toward higher efficiency. From a compliance standpoint, it may prompt global supply chain realignment, especially among Western semiconductor firms. Market-wise, if commercialized quickly, this tech could pressure industry leaders like STMicroelectronics and Infineon. Within 12–24 months, integration with multi-channel current spreading techniques could enable large-scale deployment in EV high-voltage platforms and AI infrastructure, ushering in a new era of low-loss, highly integrated power electronics.