Imec advances III-V chiplet integration with RF silicon interposer - eeNews Europe

Belgian research hub imec has made significant progress in chip integration technology, extending its 300mm RF silicon interposer platform to enable system-level integration of III-V chiplets with Si-... Read original →

Imec’s integration of III-V chiplets with Si-CMOS on a 300mm RF silicon interposer isn’t incremental—it’s a structural pivot. This breakthrough forces upstream epitaxial suppliers to shift from discrete dies to wafer-scale heterogeneous integration, while OSATs must overhaul RDL and TSV stacks for sub-THz signal fidelity. Crucially, it sidesteps reliance on EUV, reducing exposure to U.S. equipment embargoes, though III-V precursors remain export-controlled. TSMC will likely accelerate CoWoS-R for mmWave AI clusters; Intel may fast-track Foveros Direct enhancements; Samsung could leverage GAA transistors to embed III-V channels. Within 18 months, expect this to catalyze 6G testbeds and trigger SEMI standardization efforts—locking in a new high-frequency integration paradigm that redefines data center and wireless front-end architectures.