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RootSemicon has been selected as the lead organization for a South Korean government-backed project to develop domestically produced 3300-volt silicon carbide (SiC) power modules. The initiative, supervised by the Ministry of Trade, Industry and Energy and managed by the Korea Evaluation Institute o

Navitas has introduced a new UHV-TO-247-4-ISO isolated through-hole package designed for 1200V to 3300V SiC MOSFETs, setting a new benchmark for high-performance discrete power devices. The package features over 12mm creepage distance and more than 6000V integrated isolation, delivering module-like