Navitas introduces isolated through-hole package for 1200–3300V SiC MOSFETs - Semiconductor Today

Navitas has introduced a new UHV-TO-247-4-ISO isolated through-hole package designed for 1200V to 3300V SiC MOSFETs, setting a new benchmark for high-performance discrete power devices. The package fe... Read original →

Navitas’ UHV-TO-247-4-ISO isn’t just a package—it’s a system-level disruptor. By embedding >6kV isolation and 12mm creepage into a through-hole discrete, it collapses module-like safety into a cost-effective footprint, forcing upstream substrate suppliers to innovate on thermal-electrical co-design while enabling downstream converters to eliminate external isolators. This directly addresses tightening IEC/UL safety mandates in EU grid-tied systems and hyperscaler data centers, cutting certification overhead and supply chain fragility. Competitors like Infineon and Wolfspeed, entrenched in standard TO-247, now face strategic whiplash: retrofit isolation or risk losing design wins in 1500V+ solar and AI power racks. Within 18 months, this approach will redefine SiC competitiveness—not by raw die performance, but by plug-and-play high-voltage robustness—accelerating the shift from component-centric to integration-centric power electronics.