US International Trade Commission's (US ITC) determination confirmed, banning Innoscience's patent-infringing GaN products from U.S. market - The Globe and Mail

The US International Trade Commission (US ITC) confirmed its final determination on May 7, 2026, that Innoscience infringes Infineon's GaN patent, with the decision upheld after the presidential revie... Read original →

Infineon’s ITC victory signals a systemic tightening of IP barriers in power semiconductors. Technically, Innoscience’s exclusion forces downstream power module and fast-charger makers to migrate to licensed GaN solutions, indirectly boosting demand for SiC substrates—enabling Infineon to bundle its CoolGaN with SiC offerings. From a compliance standpoint, foundries in Taiwan, China and Southeast Asia risk extended 337 investigations if they fab unlicensed GaN designs, compelling supply chains to overhaul IP vetting. Competitively, Navitas or GaN Systems may target mid-tier segments, but Infineon is better positioned to cement premium dominance via cross-licensing. Over the next 18 months, a 'patent cull' will likely purge undercapitalized Chinese GaN startups lacking core IP, accelerating market consolidation.