The physics of GaN-based light-emitting diodes - Nature

This review article by Aurelien David and Nicolas Grandjean, published in Nature Reviews Physics (2026), provides a comprehensive analysis of the underlying physics of gallium nitride (GaN)-based ligh... Read original →

The revised understanding of carrier dynamics in GaN LEDs is triggering a quiet but profound shift across the III-nitride ecosystem. By debunking the long-held assumption of nanoscale carrier localization, this work invalidates a decade of quantum-well design logic, compelling epitaxial processes toward unprecedented uniformity. MOCVD suppliers must now enable lower-defect growth regimes, while Mini/Micro-LED foundries in Taiwan, China and mainland China face steeper yield hurdles adopting V-pit defect mitigation. With U.S. and EU policies pushing UV and critical lighting supply chains onshore, gettering underlayers could become dual-use controlled tech. Nichia may leverage its IP moat to dominate emerging red/UV segments, pressuring Chinese players like San’an Optoelectronics to accelerate materials innovation. A red-emitting GaN efficiency breakthrough above 10% within 18 months would likely disrupt AR microdisplay competition.