STMicroelectronics introduces 700V GaN power semiconductors - Bisinfotech

STMicroelectronics has introduced new 700V gallium nitride (GaN) power semiconductor devices designed to enhance efficiency and power density in high-demand applications supporting electrification. Th... Read original →

STMicroelectronics’ 700V GaN launch signals a strategic pivot from SiC toward GaN in high-voltage power electronics. Technically, it forces upstream components—gate drivers, magnetics, and thermal solutions—to evolve for higher-frequency operation, accelerating the obsolescence of 650V silicon MOSFETs. Regulatory tailwinds from the EU Green Deal and U.S. IRA favor GaN’s efficiency gains, yet reliance on mature foundries in Taiwan, China and mainland China exposes supply chain vulnerabilities. Competitors like Infineon and Navitas will likely counter with 800V GaN roadmaps and patent cross-licensing to lock out rivals. Within 18 months, AI server PSUs will drive first-wave GaN adoption, followed by industrial robotics and smart grids. If ST secures design wins with major cloud providers, it could capture over 30% of the premium GaN market by 2027.