STMicroelectronics introduces 700V GaN devices to improve power efficiency - New Electronics

STMicroelectronics has introduced a new line of 700V gallium nitride (GaN) power semiconductors aimed at enhancing energy efficiency and power density in high-demand applications such as AI systems, i... Read original →

STMicroelectronics’ 700V GaN launch signals GaN’s strategic shift from consumer chargers to AI and industrial power infrastructure. This move pressures upstream substrate suppliers to ramp 6-inch GaN-on-Si yields and pushes downstream designs toward MHz-range switching. The standard surface-mount package and MOSFET-replacement compatibility reduce supply chain reconfiguration costs for Western customers amid de-risking from China. By targeting 700V—above the crowded 650V segment dominated by Infineon, Navitas, and Taiwan, China players—ST sidesteps IP conflicts and captures the 48V AI server architecture upgrade cycle. Over the next 12–24 months, GaN will gain ‘efficiency premium’ acceptance in data center PFC and industrial drives. However, if U.S. export controls expand to wide-bandgap semiconductors, European firms may accelerate domestic epitaxy capacity, triggering a new capex wave.