Samsung's GaN Foundry Ramp Faces Fresh Delay After Reliability Issues Emerge in Trial Production - thelec.net

Samsung Electronics has encountered setbacks in its next-generation gallium nitride (GaN) power semiconductor foundry project, with reliability issues emerging during trial production that may delay c... Read original →

Samsung’s GaN foundry setbacks highlight the extreme technical complexity of compound semiconductor manufacturing. Failures under high-temperature stress point to process instability in MOCVD epitaxy and threshold voltage control, directly impacting upstream suppliers. With competitors like Infineon and STMicroelectronics already commercializing GaN solutions, Samsung risks losing market share in EV and data center applications. Fabless companies are now exploring alternatives such as GlobalFoundries and Powerchip, accelerating supply chain diversification. In the medium term, this delay may prompt industry-wide reassessment of GaN scalability, driving increased investment in reliability testing and hybrid silicon-GaN architectures.