onsemi Introduces GaNEXUS Gallium Nitride Power Portfolio - Macau Business

onsemi has launched its GaNEXUS™ gallium nitride (GaN) power portfolio, designed to enhance efficiency, power density, and thermal performance across applications such as AI data centers, industrial a... Read original →

onsemi’s GaNEXUS launch is a strategic strike at the power architecture bottleneck created by AI’s insatiable energy demand. Its 650V smart GaN FETs directly threaten silicon MOSFET dominance in 48V intermediate bus converters, forcing upstream acceleration in EUV-enabled GaN-on-SiC epitaxy. Geopolitically, U.S. CHIPS Act subsidies for wide-bandgap fabs shield onsemi from potential export controls involving Taiwan, China foundries—but inflate capex. Competitors like Infineon and Wolfspeed will likely counter with integrated SiC/GaN hybrids, igniting price wars in industrial motor drives. Within 18 months, if GaNEXUS leverages the Treo Platform to lock in design-toolchain control, it could dominate the ‘last centimeter’ of AI server power efficiency—pressuring TSMC and STMicroelectronics to open GaN foundry access or risk missing the infrastructure electrification wave.