onsemi Introduces GaNEXUS Gallium Nitride Power Portfolio - GlobeNewswire

onsemi has launched its new GaNEXUS™ gallium nitride (GaN) power portfolio, designed to deliver higher efficiency, greater power density, and improved thermal performance for applications such as AI d... Read original →

onsemi’s GaNEXUS launch signals a structural shift beyond incremental innovation. By integrating 650V GaN FETs with the Treo platform, it forces upstream magnetics and thermal suppliers to redesign for extreme power density. Its dual-track strategy—pairing GaN with EliteSiC—reveals a calculated hedge against material-specific bottlenecks. Geopolitically, U.S. CHIPS Act incentives favor domestic advanced packaging, potentially raising onsemi’s offshore foundry costs, though its fab-lite model buffers supply chain shocks. Competitors like Infineon and STMicroelectronics will likely counter with hybrid SiC-GaN architectures, while pure-play GaN firms (Navitas, GaN Systems) may undercut in AI server PSUs and robotics. Within 18 months, GaN adoption will surge in 48V AI rack PDUs and robotic actuators—each 1% efficiency gain translates to millions in annual data center savings. The power electronics inflection point is here.