Nexperia adds QDPAK to 1200 V SiC MOSFET portfolio - Automotive World

Nexperia has introduced 1200 V silicon carbide (SiC) MOSFETs in QDPAK packaging, targeting electric vehicle (EV) and industrial power conversion applications. The new devices deliver up to 3 kW more o... Read original →

Nexperia’s launch of 1200V SiC MOSFETs in QDPAK packaging signals a strategic pivot from raw specs to system-level thermal engineering. By routing heat directly to the heatsink—bypassing the PCB—it unlocks 3kW extra output, forcing upstream substrate suppliers and downstream inverter designers to abandon legacy FR4 architectures, especially in EV onboard chargers and solar inverters. Tightening EU battery regulations and U.S. IRA localization mandates now impose dual compliance burdens: meeting AEC-Q101 while mitigating supply chain fragmentation. Competitors like Infineon and STMicroelectronics will likely counter with DSC or hybrid CoolSiC™ approaches, but Nexperia’s industrial foothold via NEXPERIA gives it an edge in the sub-22kW segment ahead of 800V platform saturation. Within 18 months, QDPAK-style top-side cooling will become the de facto standard for 1200V SiC, accelerating adoption of trench-gate and backside metallization processes across wafer fabs.