New 650 V ICeGaN device for automotive applications from CGD helps increase EV range - Electronics360

CGD (Circuit Gate Design) has introduced a new 650V ICeGaN power device specifically designed for automotive applications, aimed at significantly enhancing electric vehicle range. This innovative devi... Read original →

CGD’s 650V ICeGaN automotive device triggers a cascade across the power semiconductor stack: upstream GaN substrate suppliers must scale high-purity epitaxy, while downstream OBC and traction inverter designs shift toward higher switching frequencies. Tightening EU Battery Regulation and U.S. IRA efficiency mandates compel OEMs to adopt wide-bandgap devices earlier—but prolonged AEC-Q101 qualification and yield ramp risks inflate near-term supply chain costs. IDMs like Infineon and STMicroelectronics will likely lock in Tier 1 partnerships for rapid validation, while Navitas and GaN Systems may target niche modules. Within 18 months, GaN adoption in 800V architectures will cross a critical threshold, displacing silicon IGBTs in mid-to-low power segments and intensifying competition between Taiwan, China, and European foundries for automotive GaN manufacturing dominance.