Future Electronics Highlights Onsemi's Ganexustm Webinar On The Future Of High-Performance Gan Power Solutions - Menafn

This webinar is a marketing event, but it signals something more consequential: Onsemi is positioning Ganexus as a direct counter to Infineon's CoolGaN and Navitas' GaNFast in the 650V-1200V power conversion segment. The GaN race has shifted from availability to a knife-fight over RDS(on) and switching frequency. Upstream, GaN-on-Si epitaxy capacity—concentrated in Taiwan, China and Japan—remains the binding constraint. Downstream, AI data center 800V architectures and 800V EV on-board chargers are driving exponential demand. Onsemi's reliance on distributors like Future Electronics rather than direct design-in channels reveals Ganexus is still in market-education phase, lacking the volume pull of a locked-in platform. On compliance, BIS restrictions on MOCVD core components have quietly reshaped the epitaxy supply chain, inflating Onsemi's COGS. Meanwhile, EU ErP 2.0 mandates are forcing GaN substitution at the demand side, creating a policy tailwind no competitor can ignore. The real 18-month variable: NVIDIA's 800V HVDC data center power architecture. Whoever secures GaN design-in first locks in 2026-2027 revenue. Onsemi's window is narrowing fast.