DRDO develops indigenous GaN technology for next-gen radars, electronic warfare; tiny 3.5×3 mm chip delive - The Economic Times

India's Defense Research and Development Organization (DRDO) has achieved a significant breakthrough in semiconductor technology by developing indigenous gallium nitride (GaN) technology for next-gene... Read original →

India's DRDO achieving a breakthrough in gallium nitride (GaN) technology marks a pivotal step toward self-reliance in high-end semiconductors. The compact 3.5×3 mm chip delivers superior power handling and RF performance, enhancing radar detection range and electronic warfare capabilities. This advancement triggers cascading effects across the supply chain—boosting demand for upstream materials and tools, accelerating midstream manufacturing, and spurring downstream defense system modernization. Policy-wise, India’s push for domestic semiconductor development is reducing reliance on foreign chips, though supply chain maturity and capital intensity remain key hurdles. Globally, this move could reshape semiconductor dynamics, especially in high-power applications, as India strengthens its position in international defense markets. Over the next 12–24 months, successful commercialization and system integration will likely accelerate India’s influence in global defense electronics.