DARPA and BAE Systems advances effort to make next-gen GaN electronics - Interesting Engineering

The U.S. Defense Advanced Research Projects Agency (DARPA) and BAE Systems are advancing a program called THREADS (Technologies for Heat Removal in Electronics at the Device Scale) to address thermal ... Read original →

The THREADS initiative by DARPA and BAE Systems targets thermal resistance in next-gen gallium nitride (GaN) electronics, with implications across the RF power semiconductor supply chain. The advancement of diamond-based thermal management solutions could significantly enhance radar performance, benefiting upstream material suppliers like Cree and信义光能, while pressuring midstream foundries to upgrade processes. From a policy standpoint, this development may intensify U.S. export controls, reshaping global semiconductor supply chains, especially impacting companies in Taiwan, China and Hong Kong, China. Market-wise, overcoming thermal limitations will accelerate miniaturization and integration of electronic warfare systems, prompting competitors to ramp up investments in wide-bandgap semiconductors. In the short term, such progress may spark renewed capital interest in the sector, while long-term effects could redefine the global high-end RF chip market landscape.