Industry Analysis
The delivery of five million GaN RF chips signals China’s full-stack validation—from epitaxy to packaging—for 6G infrastructure. This triggers a cascade: millimeter-wave front-end modules and space-air-ground terminals will accelerate LDMOS phase-out in base stations. U.S. export controls on GaN MOCVD tools have raised domestic substitution costs, yet CETC-55 and Guobo’s 8-inch SiC-based process sidesteps key restrictions, enhancing supply chain resilience. In response, Qorvo and Wolfspeed will likely deepen partnerships with Japanese and Korean foundries to counter China’s scale advantage in high-frequency power devices. Over the next 12–24 months, ripple effects will emerge: consumer OEMs integrating GaN RF for direct LEO satellite links, RF design firms in Taiwan, China and Hong Kong, China shifting to mainland manufacturing, and global 6G standard-setting influence tilting toward entities with volume production capability.
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