CGD and NXP partner to advance GaN development for data centres and automotive markets - New Electronics

CGD and NXP have formed a strategic partnership to advance gallium nitride (GaN) technology development for data center and automotive applications. This collaboration represents a significant move in... Read original →

The CGD-NXP GaN alliance signals a strategic pivot in power semiconductors from silicon to wide-bandgap dominance. Technically, it pressures upstream epitaxy suppliers to boost 6-inch GaN-on-Si wafer yields and pushes downstream converter designs toward higher switching frequencies. On compliance, tightening EU/US export controls on high-efficiency chips—especially automotive-grade GaN—demand localized backend manufacturing to secure supply chains. Competitively, Infineon and STMicroelectronics will likely accelerate their GaN roadmaps or pursue acquisitions; TSMC (Taiwan, China) opening GaN foundry capacity could redefine cost economics. Within 18 months, data centers and 800V EV architectures will become the critical battlegrounds for GaN adoption, with early volume leaders poised to set next-gen power electronics standards.