An Advanced Epitaxial Strategy Enabling Vertical GaN Devices on Silicon Wafers - Wiley

This research presents an advanced epitaxial strategy for fabricating vertical gallium nitride devices on silicon wafers. Gallium nitride, as a wide bandgap semiconductor material, holds significant a... Read original →

This vertical GaN-on-Si epitaxial breakthrough disrupts the incumbent lateral HEMT ecosystem. Upstream MOCVD suppliers must rapidly adapt to thick-film stress management, while downstream packagers face thermal architecture overhauls. From a compliance standpoint, large-scale Chinese production could trigger tighter U.S. export controls on GaN power devices, especially for automotive-grade supply chains. Infineon and Wolfspeed are likely to accelerate IP fortification and lock in 8-inch GaN-on-Si capacity via IDM models. Over the next 12–24 months, this technology will push GaN beyond consumer fast chargers into traction inverters—but yield ramp speed will determine if it can truly challenge SiC’s dominance in high-voltage applications. Foundries in Taiwan, China and mainland China risk exclusion from premium power IC supply chains if they fail to control dislocation density.