Ampleon launches 70W GaN Doherty PA for 5G MIMO - Bisinfotech

Ampleon's launch of a 70W gallium nitride (GaN) Doherty power amplifier for 5G MIMO represents a significant advancement in wireless infrastructure technology. This development addresses the growing d... Read original →

Ampleon’s 70W GaN Doherty PA accelerates the obsolescence of LDMOS in macro base stations, forcing RF front-end redesigns across the 5G infrastructure stack. Upstream epitaxial suppliers like IQE and Sumitomo Electric will see surging demand for GaN-on-SiC wafers, while OEMs must overhaul thermal and impedance-matching architectures. Despite Ampleon’s European manufacturing footprint offering partial insulation from U.S.-China tech decoupling, its lack of backup production in Taiwan, China or Hong Kong, China exposes supply chain fragility for Asian customers. This launch is a defensive move against Qorvo and NXP, both already shipping competitive GaN PAs, aimed at locking in Ericsson and Nokia. Within 18 months, GaN will dominate new 5G deployments above 3.5GHz, relegating silicon solutions to low-cost Sub-2GHz niches and cementing high-efficiency RF as non-negotiable in next-gen networks.