Semiconductor News & Analysis Feed

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2026-09-28
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2026-07-28
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2026-06-18
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2026-06-05
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2026-06-03
www.eurekalert.org 2026-06-03
Researchers at the Fraunhofer Institute for Applied Solid-State Physics (IAF) have developed a gallium nitride (GaN)-based power electronics module for 800 V bidirectional DC charging systems, as part of the GaN4EmoBiL project funded by Germany’s Federal Ministry for Economic Affairs and Energy. The
2026-06-03
www.eurekalert.org 2026-06-03
Researchers at the Fraunhofer Institute for Applied Solid State Physics (IAF) have developed a power module based on 1200-V class gallium nitride (GaN) transistors. The module, designed for bidirectional DC charging systems, features an insulating substrate and demonstrates high efficiency, power de
2026-06-03
www.eurekalert.org 2026-06-03
The Fraunhofer Institute for Applied Solid State Physics (IAF) has developed a prototype of a bidirectional single-phase 3-kW DC charger based on gallium nitride (GaN) technology. This charger uses GaN power semiconductors and alternative insulating substrates, offering advantages such as high effic
2026-05-28
www.eurekalert.org 2026-05-28
2026-05-28
www.eurekalert.org 2026-05-28
2026-05-21
www.eurekalert.org 2026-05-21