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2026-05-21
HighTec and SiFive strengthen RISC-V safety tools ... - eeNews Europe
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www.eenewseurope.com 2026-05-21 eeNews Europe
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2026-05-21
Toshiba Ships 1200V SiC MOSFET Samples for AI Data Centers - World Business Outlook
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worldbusinessoutlook.com 2026-05-21 World Business Outlook
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2026-05-21
Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers – News Hub - Medianet News Hub
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newshub.medianet.com.au 2026-05-21 Medianet News Hub
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2026-05-21
Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers - The AI Journal
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aijourn.com 2026-05-21 The AI Journal
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2026-05-21
Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers - The AI Journal
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aijourn.com 2026-05-21 The AI Journal
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2026-05-21
Toshiba Ships 1200V Trench-Gate SiC MOSFET Samples - Let's Data Science
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letsdatascience.com 2026-05-21 Let's Data Science
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2026-05-21
Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers - StreetInsider
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www.streetinsider.com 2026-05-21 StreetInsider
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2026-05-21
Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers - Business Wire
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news.google.com 2026-05-21 Business Wire
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2026-05-21
Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers - 巴士的報
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www.bastillepost.com 2026-05-21 巴士的報
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2026-05-21
Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers - The Joplin Globe
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www.joplinglobe.com 2026-05-21 The Joplin Globe
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2026-05-21
Toshiba Starts Shipping Test Samples of 1200V Trench-Gate SiC MOSFET that will Enhance Efficiency in Next-Generation AI Data Centers - Eagle-Tribune
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www.eagletribune.com 2026-05-21 Eagle-Tribune
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2026-05-20
SiC Trench MOSFET Automotive Market to Hit USD 4.13 Billion by 2033 - TimesTech
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timestech.in 2026-05-20 TimesTech
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2026-05-19
Infineon OptiMOS power MOSFETs for efficient power control - AD HOC NEWS
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www.ad-hoc-news.de 2026-05-19 AD HOC NEWS
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2026-05-15
NoMIS Power Joins ARPA-E DC-GRIDS Consortium, Supplying 3.3 kV SiC MOSFETs for High-Voltage HVDC Submodules - PR Newswire
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www.prnewswire.com 2026-05-15 PR Newswire
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2026-05-15
Emerging Sub-Segments Transforming the Fin Field-Effect Transistor (FinFET) Technology Market Landscape - openPR.com
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www.openpr.com 2026-05-15 openPR.com
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2026-05-15
UMC Rolls Out 14nm FinFET Process For Display ICs - Semiecosystem
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marklapedus.substack.com 2026-05-15 Semiecosystem
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2026-05-15
UMC rolls out 14nm FinFET platform for OLED driver ICs - digitimes
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www.digitimes.com 2026-05-15 digitimes
United Microelectronics Corp. (UMC) has released a 14nm embedded high-voltage (eHV) FinFET technology platform for display driver ICs, marking a new step in the foundry's process roadmap after years of development.The article requires paid subscription.Subscribe Now
UMC14nm processFinFET technologyOLED driver ICDisplay driver ICSemiconductor manufacturingDisplay technologyChip fabrication
2026-05-14
UMC Launches 14nm eHV FinFET Technology for Display Drivers - Intellectia AI
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intellectia.ai 2026-05-14 Intellectia AI
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2026-05-14
UMC Announces Release of 14nm eHV FinFET Platform, Advancing Innovation in Next-Generation Smartphone Displays - Yahoo Finance UK
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uk.finance.yahoo.com 2026-05-14 Yahoo Finance UK
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2026-05-14
UMC Announces Release of 14nm eHV FinFET Platform, Advancing Innovation in Next-Generation Smartphone Displays - The Daily Tribune News
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www.daily-tribune.com 2026-05-14 The Daily Tribune News
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