www.asiae.co.kr
2026-06-23
아시아경제
Research Results Unveiled at One of the World's Top Three Semiconductor Conferences
The research team led by Professor Daehyun Kim from the Department of Electronic Engineering at Kyungpook National University has developed a 45-nanometer (nm) class gallium nitride (GaN) high electron mobility transistor (HEMT) that achieved a record maximum oscillation frequency (fmax) of 742 GHz.
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