US-Japan-Taiwan unite on ZAM to challenge South Korea’s HBM lead - CHOSUNBIZ - Chosunbiz

At a top-tier global semiconductor conference, significant progress was made in the next-generation AI chip technology 'Z-Angle Memory' (ZAM), jointly developed by U.S. Intel and SAIMEMORY, a subsidia... Read original →

ZAM isn't just about stacking more layers—it redefines thermal management and interconnect paradigms in 3D DRAM. Its via-in-one TSVs and multi-directional heat dissipation will force upgrades across EDA tools, TSV etching equipment, and temporary bonding materials, disrupting the existing HBM supply chain. Backed by U.S.-Japan state support and joined by foundries from Taiwan, China, this alliance now commands an IP-to-manufacturing loop. In response, Samsung and SK hynix will likely accelerate NGDB and hybrid bonding for HBM4/5, while locking in NVIDIA and AMD through customized memory solutions and lobbying for export controls on ZAM-enabling tools. If yield ramps meet targets within 18 months, the industry may pivot its AI chip design focus from 'memory wall' to 'thermal wall' as the new bottleneck.