Tianyue Advanced Materials rose as overseas SiC giants initiated a second round of price increases; the company is a leading producer of 8-inch SiC substrates. - Moomoo

As AI chip power consumption surges, traditional silicon-based power architectures are approaching physical limits, prompting an industry-wide shift toward 800V high-voltage direct current (HVDC) syst... Read original →

Soaring AI chip power demands are forcing a paradigm shift from silicon to silicon carbide (SiC) in power delivery. Tianyue Advanced Materials, already a leader in 8-inch SiC substrates, is now testing 12-inch wafers with TSMC for CoWoS interposers—targeting thermal bottlenecks in NVIDIA’s next-gen GPUs. This move transcends material substitution; it redefines thermal management in sub-3nm advanced packaging. Technologically, SiC will cascade into solid-state transformers, HVDC distribution, and even interposer layers, reshaping AI server energy efficiency end-to-end. Geopolitically, tightening U.S.-China export controls on wide-bandgap crystal growth equipment threaten Tianyue’s scale-up unless domestic alternatives mature rapidly. Competitively, Wolfspeed and Coherent (ex-II-VI) will accelerate 12-inch yield ramp, while Infineon and STMicro may lock supply via IDM integration. Within 18 months, SiC substrates will become the “new oil” of AI infrastructure—Tianyue’s ability to deliver stable 12-inch volume could pivot its role from follower to rule-maker in global power semiconductor value chains.