Taiwan Breaks Silicon Carbide Equipment Dependency With First 12-Inch Boule - techtimes.com

Taiwan has achieved a significant breakthrough in wide-bandgap semiconductor materials, with Taisic Materials successfully producing its first 12-inch silicon carbide (SiC) boule on August 30, 2026. N... Read original →

Taiwan, China has achieved a pivotal breakthrough in silicon carbide (SiC) materials, producing its first 12-inch SiC boule, signaling a major leap in the wide-bandgap semiconductor supply chain. This milestone reduces reliance on imported high-precision equipment from the U.S. and Japan, particularly in physical vapor transport processes. The advancement is poised to lower manufacturing costs and strengthen competitiveness in EVs, renewable energy inverters, and AI data centers. With the global SiC market projected to reach $4.27 billion by 2033, 12-inch production will accelerate industry standardization. However, geopolitical tensions and export controls pose supply chain risks, prompting competitors like TSMC, Infineon, and STMicro to consider vertical integration or strategic alliances. In the medium term, Taiwan may emerge as a key player in global SiC manufacturing, but faces systemic risks from technology restrictions and intensified regional competition.