Taisic unveils p-type SiC substrate for ultra-high-voltage grid, rail applications - digitimes

Taiwan Semiconductor Manufacturing Company (TSMC)-affiliated Taisic Materials unveiled a p-type silicon carbide (SiC) substrate on September 2, targeting ultra-high-voltage power applications such as ... Read original →

Taisic Materials’ unveiling of p-type silicon carbide substrates marks a pivotal step forward in the wide-bandgap semiconductor landscape, particularly for high-voltage applications in smart grids and rail transport. This advancement directly elevates the performance of power electronics, pushing upstream processes like epitaxy and substrate fabrication to new levels. From a compliance standpoint, the move may intensify export controls from Western nations, raising operational risks for global players. Competitors such as STMicroelectronics and Infineon may respond with accelerated localization strategies or strategic alliances. Over the next 12 to 24 months, SiC adoption in electric vehicles and urban transit systems will accelerate, reshaping market dynamics. China Taiwan is poised to become a critical node in the global SiC supply chain due to its technological lead.