Siemens and Infineon leverage silicon carbide technology to advance electrical protection in data centers and factories - Siemens press

On June 8, 2026, Siemens and Infineon announced a collaboration leveraging silicon carbide (SiC) technology to enhance electrical protection in data centers and industrial facilities. The partnership ... Read original →

Siemens and Infineon’s integration of CoolSiC™ MOSFETs into semiconductor circuit breakers marks a paradigm shift from mechanical to microsecond-scale electronic protection. Technologically, this forces redesigns across DC-DC converters, AI server power delivery, and thermal management systems to harness higher switching frequencies. Regulatory-wise, the EU’s Green Deal Industrial Plan pressures legacy breakers out of compliance; while SiC raises upfront CAPEX, it slashes OPEX and emissions, bolstering supply chain resilience. Competitively, ABB and Mitsubishi Electric will likely accelerate in-house GaN/SiC module development, especially for data center applications. Over the next 12–24 months, this partnership will catalyze DC microgrid standards and make 800V+ industrial bus architectures the default for new AI compute facilities—closing the efficiency loop from chip to system.