Siemens and Infineon advance with silicon carbide technology - Vietnam Investment Review - VIR

Siemens and Infineon have advanced their collaboration in silicon carbide (SiC) technology, aiming to enhance the efficiency and reliability of power systems. As part of this partnership, Infineon wil... Read original →

The Siemens-Infineon SiC alliance is triggering a cascading redesign across the power electronics stack. Upstream, 8-inch SiC wafer fabs will accelerate; downstream, industrial and AI data center power architectures must abandon legacy relay logic for microsecond-response semiconductor breakers. EU’s Net-Zero Industry Act and U.S. IRA subsidies raise compliance costs but force localized SiC supply chains—evident in Infineon’s Dresden expansion and Wolfspeed’s German fab. Competitors like ABB and Mitsubishi Electric will likely fast-track in-house SiC modules or partner with ROHM or STMicroelectronics. Within 18 months, DC microgrids will dominate AI compute clusters, while foundries in Taiwan, China and Southeast Asia risk marginalization if they fail to solve high-quality substrate bottlenecks.