Samsung weighs Giheung R&D line for 2nm HBM foundry capacity - digitimes

Samsung Electronics is reportedly considering repurposing its second production line at the Giheung next-generation semiconductor R&D facility into a foundry send-fab, aimed at increasing advanced-nod... Read original →

Samsung's move to convert its Giheung R&D line into a 2nm foundry fab signals a strategic push to solidify its dominance in high-bandwidth memory (HBM) for AI chips, meeting surging demand from clients like NVIDIA. This shift accelerates the industry’s move toward advanced nodes, directly impacting EUV lithography, materials, and packaging technologies. From a geopolitical standpoint, the initiative intensifies supply chain fragmentation, especially amid U.S.-China tech rivalry, affecting the flow of semiconductor technologies between Taiwan, China, and South Korea. Competitors such as TSMC, UMC, or Infineon may respond by accelerating 2nm capacity investments to capture market share. Over the next 12–24 months, HBM production scaling will define industry dynamics, with AI compute demand driving rapid manufacturing upgrades. Supply chain resilience and technological self-reliance are emerging as core strategic imperatives for global semiconductor players.