Samsung, SK Hynix diverge on cell design for sub-10nm DRAM in 2028

The divergence between Samsung and SK Hynix in pursuing sub-10nm DRAM in 2028 marks a pivotal shift in memory technology. Samsung’s adoption of GAA (Gate-All-Around) architecture, versus SK Hynix’s refinement of FinFET, will trigger cascading effects across the upstream ecosystem—particularly in EUV lithography, materials, and process nodes. This strategic divergence risks fragmenting the global supply chain and intensifying geopolitical tensions. Samsung’s GAA success could solidify its dominance in high-end memory, while SK Hynix may gain cost advantages through alternative design. Market dynamics will likely see increased DRAM price volatility, compelling downstream players to accelerate alternative sourcing. Within 12–24 months, the industry is poised for a ‘technological fork,’ forcing companies to reassess capital allocation and production strategies in response to diverging technical paradigms.