Samsung reportedly speeds up 3D NAND, packaging, and substrate plans - digitimes

According to reports, Samsung Electronics is reportedly reviving previously delayed semiconductor initiatives in next-generation NAND flash, compound semiconductors, advanced packaging, and substrates... Read original →

Samsung’s revival of 3D NAND, advanced packaging, and substrate initiatives is a strategic necessity driven by AI’s demand for tighter memory-compute integration. This move will cascade through the supply chain—boosting ABF substrate and silicon interposer demand upstream while forcing controller IP and firmware innovation downstream. Amid U.S.-EU pushes for localized chip production, Samsung’s diversified manufacturing mitigates geopolitical risk but inflates capex and compliance burdens. With SK Hynix racing toward HBM4 and TSMC scaling CoWoS, Samsung aims to reclaim system-level integration leadership. Over the next 18 months, its vertical integration prowess will be decisive: successful co-production of >1Tb QLC NAND with chiplet packaging by 2027 could set new edge-AI storage standards; failure risks ceding high-end ground to the TSMC-Micron alliance.