Samsung Electronics' Q2 HBM Share Surges to 33%, Narrowing Gap with SK Hynix to 17 Percentage Points - finance.biggo.com

In the high-bandwidth memory (HBM) market, Samsung Electronics is rapidly closing the gap with market leader SK Hynix. According to Counterpoint Research, SK Hynix maintained a 50% global market share... Read original →

The HBM market is undergoing a fundamental shift driven by Samsung's rapid technological advancement. By leveraging a generation-ahead 10nm DRAM process for HBM4 production and in-house 4nm foundry capabilities, Samsung has significantly improved performance and yield, challenging SK Hynix’s long-standing dominance. This technological leap not only strengthens Samsung’s position in the AI accelerator supply chain but also pressures downstream players like NVIDIA to accelerate their own roadmap. Meanwhile, Chinese firm CXMT is capitalizing on DRAM supply constraints to gain market share, intensifying global memory competition. From a compliance perspective, geopolitical tensions are mounting, especially around critical manufacturing nodes, raising supply chain risks. Over the next 12 months, the commercialization of HBM4 will accelerate industry-wide tech transitions, compelling rivals to expedite product cycles. Samsung’s early lead is likely to solidify its dominance in high-end memory segments.