Samsung Delays High-NA EUV Adoption Until 2030 for 1 nm Node - TechPowerUp

Samsung has announced that the adoption of high numerical aperture (NA) EUV lithography for its 1nm node chips will be delayed until 2030. This decision highlights the technical and commercial challen... Read original →

Samsung's delay in adopting high-NA EUV for its 1nm node until 2030 signals a strategic recalibration in its advanced process development. This move undermines Samsung's competitive edge against TSMC, especially in high-performance chip markets. The technical and financial burdens of high-NA EUV adoption—such as equipment costs, yield challenges, and production complexity—have forced a reevaluation of R&D priorities. Supply chain implications include potential shifts in ASML’s production planning and increased pressure on downstream foundries to accelerate alternative technologies. From a geopolitical standpoint, this decision reflects the growing tension between technological ambition and commercial viability amid global supply chain fragmentation. In the short term, TSMC may solidify its leadership; in the long term, the industry could see a bifurcation in process technology paths, spurring innovation in alternative lithography or design-for-manufacturing strategies. Investors should closely monitor Samsung’s long-term profitability in advanced nodes.