Resonac grows 300mm SiC crystal, marking a substrate milestone

Resonac’s breakthrough in 300mm SiC crystal growth marks a pivotal shift in power semiconductor manufacturing. This advancement will accelerate upstream material quality improvements and downstream device scaling, particularly in EV and data center applications where thermal and efficiency performance are critical. From a policy standpoint, this development may intensify scrutiny over critical supply chains, especially under tightening export controls. Competitors like STMicroelectronics and Infineon may respond with accelerated investments in domestic production or strategic partnerships. In the next 12–24 months, while SiC substrate pricing may stabilize, supply constraints will persist, pushing the industry toward a high-margin, high-barrier maturity phase.