onsemi launches GaNEXUS gallium nitride power portfolio - Semiconductor Today

onsemi has launched its GaNEXUS gallium nitride (GaN) power portfolio, addressing the growing demand for high-efficiency, compact power solutions across applications such as AI data centers, 48V syste... Read original →

onsemi’s GaNEXUS launch is a strategic strike at the power architecture bottleneck created by AI’s insatiable energy demands. By integrating 650V GaN FETs with its Treo platform, it forces a redesign cascade: shrinking magnetics, simplifying thermal management, and marginalizing silicon MOSFETs in 48V AI server rails. This reshapes both upstream GaN epitaxy specs and downstream module engineering. Tightening U.S. export controls on wide-bandgap semiconductors may raise costs for non-U.S. clients, but onsemi’s domestic 6-inch GaN fab in Maine mitigates supply risk. While Wolfspeed pushes SiC-GaN convergence and Navitas dominates consumer fast-charging, onsemi leverages NVIDIA’s MGX ecosystem to lock in industrial-grade, high-margin applications. Within 18 months, GaN will establish an 'efficiency premium' norm in AI data centers, making co-design between sub-3nm logic chips and GaN power stages a de facto standard.