[News] SK hynix Advances DRAM and NAND Roadmap, Targets 3x Wafer Output by 2034, 375-Layer NAND at Year-End - TrendForce

SK Hynix has announced significant advancements in its DRAM and NAND flash roadmap, targeting a threefold increase in wafer output by 2034 and mass production of its 375-layer NAND by year-end. This m... Read original →

SK hynix’s aggressive capacity expansion and 375-layer NAND breakthrough will reshape the memory ecosystem. Substituting molybdenum for tungsten in word lines not only enhances signal integrity but forces equipment vendors like Applied Materials to accelerate high-aspect-ratio deposition solutions, triggering upstream material and tooling upgrades. Geopolitically, while South Korea’s ‘K-Semiconductor Strategy’ bolsters domestic supply chains, over-concentrating fabs in Yongin heightens exposure to seismic or power disruption risks, inflating compliance costs. Facing Samsung’s parallel push into 400+ layer NAND and EUV-based DRAM, SK hynix leverages its Kioxia stake as a strategic hedge—but structural IP barriers prevent full synergy. Within 18 months, as 375-layer NAND scales, the industry’s ‘layer-count arms race’ will near its physical limits; beyond 480 layers, diminishing returns will shift focus toward chiplet integration and compute-in-memory architectures to sustain performance gains.