[News] Laser Annealing Adoption May Broaden with Wolfspeed, Samsung SiC Push and 400-Layer NAND Expansion - TrendForce

As the semiconductor industry advances toward higher performance and more complex structures, laser annealing is expanding beyond traditional silicon wafers into silicon carbide (SiC), emerging as a k... Read original →

Laser annealing is transitioning from a niche process to a pivotal enabler in advanced semiconductor manufacturing. Technologically, its precision thermal control for SiC lattice repair and channel crystallization in >400-layer 3D NAND will force co-evolution of ion implantation and deposition tools, while tightening integration with EUV and hybrid bonding flows. Geopolitically, as U.S.-EU export controls on wide-bandgap semiconductors intensify, Wolfspeed and Samsung’s push toward localized laser annealing deployment mitigates supply chain fragmentation risks—but extends qualification timelines and inflates capex. Competitively, SK hynix will likely accelerate adoption to sustain HBM leadership, while equipment vendors like DIT from Taiwan, China could leverage this window to break into global supply chains dominated by Japanese and American firms. Within 12–24 months, laser annealing will evolve from optional to mandatory across sub-3nm logic, high-stack memory, and automotive-grade SiC, triggering a new wave of equipment investment.