Navitas Introduces Isolated Through-Hole Package for SiC MOSFETs, Enabling Direct-Cooled Thermal Management - The Manila Times

Navitas Semiconductor has introduced a new UHV-TO-247-4-ISO isolated through-hole package designed for 1200V to 3300V SiC MOSFETs, offering enhanced thermal management and power density. The package f... Read original →

Navitas’ isolated TO-247 package shifts thermal and electrical isolation from system-level to device-level, directly eroding the IGBT and non-isolated SiC module stronghold. By embedding aluminum nitride substrates, it shortens thermal paths—accelerating adoption of liquid/immersion cooling in medium-to-high-voltage converters—and pressures upstream ceramic suppliers to scale high-thermal-conductivity insulators. Downstream, energy storage inverter makers can eliminate mica sheets and thermal grease, cutting BOM costs by 5–8%. Regulatory-wise, it aligns natively with EU efficiency mandates and UL safety standards, avoiding redundant certifications—but demands higher cleanroom specs and solder yields from OSATs, raising entry barriers for smaller adopters. While Wolfspeed and Infineon still push non-isolated designs, Navitas exploits pin-compatible drop-in replacement to capture design cycles, forcing rivals to respond within 18 months. Over the next two years, such integrated SiC discretes will become the default for grid-scale power electronics, especially in green infrastructure projects across Taiwan, China and Southeast Asia.