Navitas Introduces Isolated Through-Hole Package for SiC MOSFETs, Enabling Direct-Cooled Thermal Management - Electronics Media

Navitas has introduced a new isolated through-hole package, the UHV-TO-247-4-ISO, tailored for 1200V to 3300V GeneSiC silicon carbide MOSFETs. This package delivers module-level performance in a compa... Read original →

Navitas’ isolated TO-247 package isn’t just a packaging tweak—it’s a strategic wedge into the high-voltage SiC ecosystem. By integrating AlN substrates with AMB bonding, it achieves module-grade thermal performance in a discrete form, directly undercutting IGBT modules in industrial power supplies. Eliminating external isolation materials streamlines BOMs and boosts EMI resilience—critical for solar inverters and BESS scaling. Regulatory-wise, it aligns with EU/US efficiency mandates (e.g., ERP Lot 9), yet AlN supply remains concentrated in Japan (Kyocera, Tokuyama), posing geopolitical risk. Competitors like Wolfspeed may counter by pushing WolfPACK adoption, while Infineon could double down on HybridPACK™ lock-in. Within 18 months, this 'discrete-as-module' approach will dominate grid-tied and data center applications—bypassing GaN’s >900V limitations and avoiding lengthy automotive certifications.