Naura 3D DRAM etching breakthrough could give CXMT a new path beyond EUV

Naura's breakthrough in 64-layer 3D DRAM etching marks a pivotal shift for China's memory sector, offering an alternative to EUV-dependent processes. This advancement will stimulate upstream suppliers to adapt materials and equipment for next-gen nodes, especially in photoresist, etch gases, and CMP tools. From a compliance standpoint, the development reduces reliance on foreign lithography technologies, though technical maturity and yield remain key hurdles. Internationally, this progress could erode the dominance of overseas memory manufacturers, prompting competitors to accelerate innovation or pursue strategic alliances. Over the next 12–24 months, if Naura achieves commercial production, it may trigger a wave of 3D architecture adoption among domestic memory firms, forcing global equipment vendors to recalibrate their strategies.