Murata previews SiC power and AI sensors at electronica 2026 - Global Sources

Murata's move is not a product preview—it is a structural pivot from passive components into active power semiconductors. The real moat in SiC is not chip design; it is high-reliability packaging, where four decades of ceramic substrate expertise gives Murata an asymmetric advantage. While Wolfspeed and Coherent bleed capital on substrate yield, Murata sidesteps the most capital-intensive wafer-fab layer entirely, anchoring itself in the highest-margin mid-stack via a materials-plus-packaging play. The AI sensor angle reveals a deeper strategic intent: converging power management with intelligent sensing. As 800V DC architectures displace legacy 48V rails in AI data centers, SiC demand will scale non-linearly. If Murata integrates sensing into power modules, it is planting a flag in Infineon's and onsemi's backyard. Risk vectors: tightening export controls on MOCVD epitaxy equipment could throttle Murata's capacity ramp if it depends on US-origin tools. Rohm already holds a production lead in SiC MOSFETs; Infineon's CoolSiC brand locks in European OEMs. Murata's competitive window is roughly 18 months. 12-to-24-month outlook: SiC will migrate from EV exclusivity into AI compute infrastructure. Expect Murata to enter the data-center power chain as a power-plus-sensing module vendor, converting its existing MLCC customer base into SiC volume—this is the true long-tail effect no one is pricing in yet.