KERI team corrects 15-year error in global SiC power semiconductor standard - DongA Science

A 15-year parameter drift in the global SiC power semiconductor standard, now corrected by KERI, is far more consequential than a technical footnote. The timing is the problem: the industry sits at peak adoption for 800V EV architectures and utility-scale inverters, meaning every device certified, every thermal margin calculated, every failure model built on the old baseline is now suspect. If the deviation touches breakdown voltage or on-resistance test conditions, the ripple is structural. Epitaxy growers optimized crystal parameters against a wrong reference; module designers sized parallel current-sharing on an incorrect baseline. This is a systematic offset embedded across the stack, not a calibration tweak. Compliance exposure is immediate. IEC and JEDEC certification chains will trigger re-review cycles. OEMs whose safety margins depended on legacy data face recall risk. Wolfspeed, Infineon, Rohm, and substrate suppliers across China and Taiwan, China must revise datasheets and re-qualify. Strategically, Korea is leveraging standards authority to insert itself into a SiC narrative long dominated by Wolfspeed and STMicro. Chinese manufacturers who completed automotive certification under the old spec now carry a switching cost that newer entrants simply do not. Over the next 12 to 24 months, expect a standards-migration shakeout: smaller device makers unable to absorb re-certification costs will exit, while leaders lock in patent positions under the corrected baseline. SiC is transitioning from functional to precise—a hallmark of a maturing power semiconductor market.