Infineon-led European project Moore4Power launches - Semiconductor Today

Led by Infineon Technologies AG based in Munich, Germany, the European semiconductor R&D project Moore4Power has officially launched. The project, aimed at driving disruptive innovations in power elec... Read original →

The EU’s €91 million bet on Infineon-led Moore4Power is a defensive countermove against U.S.-China decoupling in power semiconductors. Technologically, its focus on wide-bandgap integration will force European equipment makers to accelerate etch and deposition tools for high-density SiC/GaN chips, while pushing standardization of automotive modules. Compliance-wise, tying the project to the Chips Act’s localization mandates raises near-term R&D costs but preempts potential U.S. export controls on critical materials. Competitors like STMicroelectronics may fast-track SiC collaboration with GlobalFoundries in France, while Wolfspeed could deepen direct supply ties with VW and BMW. Within 18 months, Europe may form a regional power-device ecosystem—but without breakthroughs in substrate yield, its 'technological sovereignty' risks becoming idle capacity.