High-efficiency drive: how onsemi’s EliteSiC 1200 V MOSFET targets EV inverters - AD HOC NEWS

ON Semiconductor's newly launched EliteSiC 1200 V MOSFET family is emerging as a core component in next-generation electric vehicle inverters. Built on silicon carbide technology, these devices offer ... Read original →

onsemi’s 1200V EliteSiC MOSFET isn’t just a component upgrade—it triggers a cascade across the EV power stack: upstream SiC substrate suppliers face tighter purity and larger wafer demands, while downstream inverter designs accelerate toward lead-free assembly and double-sided cooling. AEC-Q101 compliance ensures automotive ruggedness, yet onsemi’s vertical integration is fundamentally a geopolitical hedge against U.S.-China supply fractures. With Infineon and STMicroelectronics holding early leads in 800V platforms, onsemi counters by locking in long-term North American OEM contracts, forcing rivals to fast-track localized SiC fabs. Within 18 months, as 800V EVs scale, this device will push SiC adoption past 35% in traction inverters and compel co-evolution in packaging, thermal solutions, and gate drivers—establishing a new high-efficiency powertrain standard.