Future Electronics and Infineon Technologies to Host Webinar on Next-Generation Silicon Power MOSFETs - openPR.com

Infineon co-hosting a technical webinar with distributor Future Electronics on next-gen silicon power MOSFETs is not a marketing exercise—it is a strategic signal in the power semiconductor arms race. The SiC/GaN hype cycle has run five years, yet in mid-voltage, high-current applications—industrial drives, 48V datacenter rails, automotive 12V/48V systems—silicon Superjunction and Trench MOSFETs remain the cost-performance sweet spot. Infineon's 'next generation' almost certainly targets a 15-20% Rds(on) reduction, lower switching losses, and higher avalanche rating, pushing the silicon ceiling higher and directly compressing onsemi's and STMicro's margins in the 100V-650V band. On supply chain, Infineon's captive 300mm wafer capacity (Kaiserslautern, Singapore) is a moat, but back-end packaging still leans on nodes in Taiwan, China and Malaysia. Future Electronics' role is shifting from logistics to technical enablement and inventory buffering—a survival imperative as OEMs push direct-sourcing. Competitive read: onsemi will likely respond with H2 pricing pressure; STMicro may pivot to GaN-in-Si packaging for differentiation. Over the next 18 months, silicon MOSFETs will not die—they will stratify. High-end gets cannibalized by SiC; mid-range silicon regains Tier-1 automotive favor on cost grounds. The subtext of this webinar: do not rush the full SiC migration—my silicon parts still have three more years of relevance.