CXMT records strong growth in Q2 2026 global DRAM and HBM market - Huawei Central

Huawei's semiconductor subsidiary demonstrated strong performance in the global DRAM and HBM market during Q2 2026, highlighting its growing competitiveness in memory technologies. This achievement re... Read original →

Huawei's strong performance in the global DRAM and HBM market during Q2 2026 marks a significant breakthrough in memory technology. This advancement will stimulate upstream demand for silicon wafers, photoresists, and equipment, while accelerating downstream adoption of high-bandwidth memory in AI and data center applications. From a compliance perspective, despite ongoing international supply chain restrictions, Huawei’s domestic R&D and ecosystem development reduce reliance on foreign technologies, though geopolitical tensions may trigger further tech barriers. Competitors like Samsung and Micron are likely to intensify investments in HBM2E and advanced DRAM processes to maintain market dominance. Over the next 12–24 months, sustained AI compute demand will drive continued growth in memory bandwidth. If Huawei maintains its R&D momentum, it could capture a larger share in high-end memory chips, reshaping the global semiconductor landscape.