China gets an early shot at the next SiC power-chip cycle

The launch of the world's first 1200V SiC super-junction MOSFET by Shanghai Alkadi Semiconductor marks a significant leap for China in high-end power semiconductors. This development accelerates upstream substrate and epitaxy processes, as well as midstream chip design, especially for AI server and data center power systems. From a compliance perspective, the product may reduce reliance on foreign supply chains, though technical maturity and yield remain challenges. Global players like Infineon and STMicroelectronics may respond with localized strategies or patent litigation. Over the next 12 to 24 months, SiC power devices are expected to enter rapid growth, particularly in EV and solar inverters, where Chinese firms could seize global market share.